View FDS2170N3_361731.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDS2170N3
May 2003
FDS2170N3
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
* 3.0 A, 200 V. RDS(ON) = 128 m @ VGS = 10 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching, low gate charge (26nC typical) * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
* Synchronous rectifier * DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
200 20
(Note 1a)
Units
V V A W C
3.0 20 3.0 1.8 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
C/W
Package Marking and Ordering Information
Device Marking FDS2170N3 Device FDS2170N3 Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS2170N3 Rev B1W)
FDS2170N3
Electrical Characteristics
Symbol
WDSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 100 V, ID=3.0 A
Min
Typ
Max Units
370 3 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
VGS = 0 V,
ID = 250 A
200 231 1 100 -100
V mV/C A nA nA
ID = 250 A, Referenced to 25C VDS = 160 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V 2
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A,TJ = 125C VDS = 10 V, ID = 3.0 A VDS = 100 V, f = 1.0 MHz V GS = 0 V,
4 -10 108 214 15
4.5
V mV/C
128 268
m S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
1292 72 24 1.5
pF pF pF 22 10 48 36 36 ns ns ns ns nC nC nC
VGS = 15 mV, f = 1.0 MHz VDD = 100 V, VGS = 10 V, ID = 1 A, RGEN = 6
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
12 5 30 23
VDS = 100 V, VGS = 10 V
ID = 3.0 A,
26 7 10
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage Diode Reverse Recovery Time IF = 3.0A diF/dt = 100 A/s Diode Reverse Recovery Charge 2.5
(Note 2)
A V nS nC
0.76 95 552
1.2
(Note 2)
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40C/W when mounted on a 1in2 pad of 2 oz copper
b)
85C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS2170N3 Rev B1(W)
FDS2170N3
Dimensional Outline and Pad Layout
FDS2170N3 Rev B1(W)
FDS2170N3
Typical Characteristics
30 VGS = 10V ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0 2 4 6 8 10 12 14 VDS, DRAIN-SOURCE VOLTAGE (V) 6.5V 6.0V 7.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.6 VGS = 5.5V 1.4
1.2
6.0V
6.5V
10V
1
0.8 0 5 10 ID, DRAIN CURRENT (A) 15 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.35 RDS(ON), ON-RESISTANCE (OHM)
2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 3.0A VGS = 10V
ID = 1.5 A 0.3 TA = 125oC 0.25 0.2 0.15 0.1 0.05 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
TA = 25oC
Figure 3. On-Resistance Variation with Temperature.
60 VDS = 20V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 C 25oC 125oC IS, REVERSE DRAIN CURRENT (A)
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS2170N3 Rev B1(W)
FDS2170N3
Typical Characteristics
14 VGS, GATE-SOURCE VOLTAGE (V) ID = 3.0A 12 150V CAPACITANCE (pF) 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg, GATE CHARGE (nC) VDS = 50V 100V
1800 1500 1200 900 600 300 CRSS 0 0 40 80 120 160 200 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS f = 1MHz VGS = 0 V
CISS
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms 1 10ms 100ms 1s DC VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.001 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) 100s 50
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
10
40
SINGLE PULSE RJA = 85C/W TA = 25C
30
0.1
20
0.01
10
0 0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.1
0.1 0.05 0.02
R JA (t) = r(t) * R JA R JA = 85 C/W P(pk)
0.01
t1 t2 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS2170N3 Rev B1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2

▲Up To Search▲

Price & Availability of FDS2170N3

	To Download FDS2170N3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .